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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D452
BGA2031 MMIC variable gain amplifier
Preliminary specification Supersedes data of 1999 Feb 26 1999 Jul 23
Philips Semiconductors
Preliminary specification
MMIC variable gain amplifier
FEATURES * High gain * Excellent adjacent channel power rejection * Small SMD package * Low dissipation. APPLICATIONS * General purpose variable gain amplifier for low voltage and medium power * Driver for power amplifiers in systems that require good linearity, such as CDMA, both cellular band (850 MHz) and PCS (1.9 GHz). This is because of the high output power and good linearity. DESCRIPTION Silicon Monolitic Microwave Integrated Circuit (MMIC) 2 stage variable gain amplifier in double polysilicon technology in a 5-pin SOT551A plastic SMD package for low voltage medium power applications. PINNING PIN 1 2 3 4 5 RF in CTRL VS1 VS2 + RF out GND
BGA2031
DESCRIPTION
handbook, halfpage
VS1 4 RFin VS2+RFout GND
5
1 Top view
2
3
CTRL
BIAS CIRCUIT
MAM429
Marking code: G1.
Fig.1 Simplified outline (SOT551A) and symbol.
QUICK REFERENCE DATA SYMBOL VS1, VS2 IS PARAMETER supply voltages supply current into pin 3 + pin 4 VCTRL = 0 VCTRL = 2.7 V; VS = 3.6 V VCTRL = 2.4 V; VS = 3 V PL ACPR Gp G load power adjacent channel power rejection power gain gain control range at 1 dB gain compression point; f = 1.9 GHz f = 1.9 GHz; PL = 12 dBm f = 836 MHz; PL = 8 dBm f = 1.9 GHz; PL = 12 dBm f = 836 MHz; PL = 8 dBm f = 836 MHz; PL = 8 dBm CONDITIONS 0 51 30 13.5 48 55 26 27 70 TYP. 3.6 - 63 37 - - - - - - MAX. 4.1 UNIT V A mA mA dBm dBc dBc dB dB dB
1999 Jul 23
2
Philips Semiconductors
Preliminary specification
MMIC variable gain amplifier
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VS ICTRL IS1 IS2 PD Ptot Tstg Tj PARAMETER DC supply voltage control current current into pin 3 current into pin 4 drive power total power dissipation storage temperature operating junction temperature Ts 90 C VCTRL = 2.7 V; VS1 = 4.2 V; VS2 = 4.2 V VS1 = 4.2 V VS2 = 4.2 V CONDITIONS - - - - - - -65 - MIN.
BGA2031
MAX. 4.2 1.2 27 50 tbf 280 +150 150 V
UNIT mA mA mA dBm mW C C
THERMAL RESISTANCE SYMBOL Rth j-s PARAMETER thermal resistance from junction to solder point CONDITIONS Ptot = 280 mW; Ts 90 C VALUE 215 UNIT K/W
1999 Jul 23
3
Philips Semiconductors
Preliminary specification
MMIC variable gain amplifier
CHARACTERISTICS Tj = 25 C; ZS = ZL = 50 ; VS = 3.6 V; unless otherwise specified. SYMBOL f VS1, VS2 IS PARAMETER frequency range supply voltages supply current (in pin 3 + pin 4) VCTRL = 0 VCTRL = 2.7 V; VS = 3.6 V VCTRL = 2.4 V; VS = 3 V ICTRL f = 1900 MHz f GP G GCS ACPR frequency range power gain gain control range gain control slope VCTRL = 2.7 V; PL = 12 dBm 0 < VCTRL < 2.7 V middle of G 1850 - - - - - - - - - 824 VCTRL = 2.7 V; PL = 8 dBm 0 < VCTRL < 2.7 V middle of G - - - - - - - - - - 26 61 38 48 67 13.5 tbf 1:3.5 1:1.6 - 27 70 40 55 69 12 tbf 1:2 1:1.7 control current VCTRL = 2.7 V CONDITIONS MIN. 800 2.7 - 39 23 0.7 - 3.6 0 51 30 0.92 TYP.
BGA2031
MAX. 2500 4.1 10 63 37 1.1
UNIT MHz V A mA mA mA
1950 - - - - - - - - - 849 - - - - - - - - -
MHz dB dB dB/V dBc dBc dBm dBm/Hz
adjacent channel power 1.23 MHz offset; BWACP = 30 kHz; rejection BWcarrier = 1.23 MHz; PL = 10 dBm 1.98 MHz offset; BWACP = 30 kHz; BWcarrier = 1.23 MHz; PL = 10 dBm
PL PN VSWRIN VSWROUT f = 836 MHz f GP G GCS ACPR
load power noise power input VSWR output VSWR
at 1 dB gain compression point in CDMA receive band (1895 - 1955 MHz) VCTRL = 2.7 V VCTRL = 2.7 V
frequency range power gain gain control range gain control slope
MHz dB dB dB/V dBc dBc dBm dBm/Hz
adjacent channel power 885 kHz offset; BWACP = 30 kHz; rejection BWcarrier = 1.23 MHz; PL = 8 dBm 1.98 MHz offset; BWACP = 30 kHz; BWcarrier = 1.23 MHz; PL = 8 dBm
PL PN VSWRIN VSWROUT
load power noise power input VSWR output VSWR
at 1 dB gain compression point in CDMA receive band (869 to 894 MHz) VCTRL = 2.7 V VCTRL = 2.7 V
1999 Jul 23
4
Philips Semiconductors
Preliminary specification
MMIC variable gain amplifier
BGA2031
MGS529
MGS530
handbook, halfpage
60
handbook, halfpage
16
IS(tot) (mA) 40
PL (dBm)
(3) (2) (1)
12
8
4 20 0 836 MHz 1900 MHz
0 0 VS = 3.6 V. (1) Tamb = -30 C. (2) Tamb = 25 C. (3) Tamb = 85 C. 1 2 VCTRL (V) 3
-4 -30
-20
PD (dBm)
-10
VS = 3.6 V; VC = 2.7 V.
Fig.2
Total supply current as a function of control voltage; typical values.
Fig.3
Load power as a function of the drive power; typical values.
handbook, halfpage
40
MGS531
handbook, halfpage
GP (dB) 20
(1) (2)
40 GP (dB) 20
MGS532
(1)
0
(3)
(2)
0
(3)
-20 -20
-40
-40
-60 0 1 2 VCTRL (V) 3
0
1
2
VCRTL (V) 3
VS = 3.6 V; f = 1.9 GHz. (1) Tamb = -30 C. (2) Tamb = 25 C. (3) Tamb = 85 C.
VS = 3.6 V; f = 836 MHz. (1) Tamb = -30 C. (2) Tamb = 25 C. (3) Tamb = 85 C.
Fig.4
Power gain as a function of control voltage; typical values.
Fig.5
Power gain as a function of control voltage; typical values.
1999 Jul 23
5
Philips Semiconductors
Preliminary specification
MMIC variable gain amplifier
BGA2031
MGS533
MGS534
handbook, halfpage
0
handbook, halfpage
0
ACPR (dBc) -20
ACPR (dBc) -20 offset = 1.23 MHz
offset = 0.885 MHz -40
-40
-60 offset = 1.98 MHz
-60 offset = 1.98 MHz
-80 -16
-12
-8
-4
0
4
8 12 PL (dBm)
-80 -20
-16
-12
-8
-4
0
4 8 PL (dBm)
VS = 3.6 V; f = 1.9 GHz; PD = -13.5 dBm.
VS = 3.6 V; f = 836 MHz; PD = -19 dBm.
Fig.6
Adjacent channel power rejection as a function of the load power; typical values.
Fig.7
Adjacent channel power rejection as a function of the load power; typical values.
1999 Jul 23
6
Philips Semiconductors
Preliminary specification
MMIC variable gain amplifier
ELECTRICAL BLOCK DIAGRAM
handbook, full pagewidth
BGA2031
R2 VS1 C2 C3
VS2
VS1
RF input DC-block
IN L1
VS2-RFout L2 GND GND Bias-T
RF output
R1 Vctrl C1
CTRL
BIAS CIRCUIT
MGS535
Fig.8 Test diagram.
List of components (see Fig.8) COMPONENT C1 C2 C3 L1, L2 R1 R2 Note 1. The striplines are on a gold plated double copper-clad printed-circuit board (r = 6.15), board thickness = 0.64 mm, copper thickness = 35 m, gold thickness = 5 m. DESCRIPTION multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor stripline; note 1 SMD resistor SMD resistor VALUE 10 nF 22 nF 1.5 nF 50 22 ; 0.16 W 2.4 ; 0.16 W 0603 0603 DIMENSIONS 0603 0603 0603 CATALOGUE NO. tbf tbf tbf tbf tbf tbf
1999 Jul 23
7
Philips Semiconductors
Preliminary specification
MMIC variable gain amplifier
PACKAGE OUTLINE Plastic surface mounted package; 5 leads
BGA2031
SOT551A
Package under development
Philips Semiconductors reserves the right to make changes without notice.
E A X
D
B
y HE e2 b1 vMA
5
4
Q
pin 1 index
A
A1
1
e e1
2
bp
3
wM B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.3 0.2 b1 0.8 1.0 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 0.65 e1 1.3 e2 0.975 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT551A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 1999-05-07
1999 Jul 23
8
Philips Semiconductors
Preliminary specification
MMIC variable gain amplifier
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BGA2031
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Jul 23
9
Philips Semiconductors
Preliminary specification
MMIC variable gain amplifier
NOTES
BGA2031
1999 Jul 23
10
Philips Semiconductors
Preliminary specification
MMIC variable gain amplifier
NOTES
BGA2031
1999 Jul 23
11
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 67
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125006/03/pp12
Date of release: 1999
Jul 23
Document order number:
9397 750 06072

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